Components

20V MOSFETs in SOT-23F Feature Low RDS(on)

Toshiba America Electronic Components, Inc. (TAEC) has introduced four new 20V MOSFETs that feature some of the lowest on-resistance specifications in the industry. Housed in small SOT-23F packages, the SSM3K344R, SSM3K345R, SSM3J355R and SSM3J358R are suitable for lowering the power consumption in power supply controls for individual function blocks, or for power supply distribution.

Applications include mobile devices, such as PCs, laptops and tablets, in addition to other consumer products and industrial equipment.

Toshiba’s lineup of SOT-23F package MOSFETs provide a simple FET switch functionality for power rails up to 40V, at currents up to 6A. The company’s UMOSVII-H MOSFET process allows for a significant reduction in gate switch charge and on-state resistance (RDS(on)) when compared to the previous MOSFET process, resulting in greater power efficiency.

Toshiba’s SOT-23F package (2.4×2.9mm) offers superior power dissipation and can be installed in the industry-standard SOT-23 package land pattern.

The new 20V products achieve low on-resistance by utilizing the latest low voltage trench structure process and feature a highly allowable power dissipation rating (2.4×2.9mm, PD=1.0 W).

The SSM3K344R, SSM3K345R, SSM3J355R and SSM3J358R are available now.

Toshiba America Electronic Components Inc.
To Top

Join 50,000+ Power Pros

 

  • Keep pace with relentless innovation
  • Influence the conversation
  • Take your insights to another level

You have Successfully Subscribed!