Motors and Control

200V Half-Bridge Gate Driver for Reliable Motor Start-Up

Infineon Technologies AG is introducing the IRS2007S 200V half-bridge gate driver IC in a standard SOIC-8 (DSO-8) package. It is a new member of the EiceDRIVER™ 200V level-shift gate driver family. Featuring undervoltage-lockout (UVLO) for VCC and VBS, the new gate driver ensures a higher reliability in start-up operations than previous product generations.

The IRS2007S is tailored for low-voltage (24V, 36V, and 48V) and medium-voltage (60V, 80V, 100V, and 120V) motor control applications in battery driven devices. They are typically found in power tools, household and garden equipment, as well as in light electric vehicles such as e-bikes and e-scooters, and in e-toys like drones.

The new IRS2007S includes integrated dead-time and shoot-through protection. It also features low quiescent currents, tolerance of negative transient voltage and dV/dt immunity. Therefore, the gate driver ensures the device reliability and reduces the BOM.

Similar to other members of the 200V level-shift gate driver family, IRS2007S also utilizes Infineon’s advanced high-voltage IC technology to realize a compact, efficient and robust monolithic construction. A smaller MLPQ 4×4 14L (VQFN-14) package option is also available in the family.

Summary of features:

  • I O+ / I O- of 290mA / 600mA typical gate current
  • Gate drive supplies up to 20V per channel
  • Under voltage lockout for VCC, VBS
  • 3V, 5V, 15V input logic compatible
  • Tolerant to negative transient voltage
  • Designed for use with bootstrap power supplies
  • Cross-conduction prevention logic
  • Matched propagation delay for both channels
  • Internal set dead-time
  • High-side output in phase with HIN input
  • Low-side output out of phase wit LIN input
  • -40°C to 125°C operating range
  • 2kV HBM ESD
  • RoHS compliant

The 200V level-shift gate driver family comprises three-phase, half-bridge, and high and low side gate driver ICs, in both, Silicon-on-Insulator (SOI) and Junction Isolation (JI) options. The three-phase gate driver ICs utilize Infineon’s SOI technology to provide functional isolation with industry leading negative V S robustness and reduced level shift losses.

Additionally, the SOI solution comes with integrated bootstrap diodes (BSD) to further reduce overall cost, simplify layout, and reduce PCB size.

EiceDRIVER IRS2007S can be ordered now.

Infineon Technologies AG
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