20-V Dual FETs feature RDS(ON) of 34mΩ at 4.5V and 45mΩ at 2.5V
Vishay Intertechnology, Inc. today introduced a new dual n-channel TrenchFET® power MOSFET in the ultra-compact, thermally enhanced PowerPAK® SC-70 package. Designed to save space and increase power efficiency in portable electronics, the Vishay Siliconix SiA936EDJ features the industry's lowest on-resistance for 20 V (12 V VGS and 8 V VGS) devices at 4.5 V and 2.5 V gate drives in the 2 mm by 2 mm footprint area. The device released today is optimized for load and charger switches, dc-dc converters, and H-bridges and battery protection for power management in smartphones, tablet PCs, mobile computing devices, non-implantable portable healthcare products, and handheld consumer electronics with small brushless dc motors.
For these applications the SiA936EDJ offers on-resistance of 34mΩ (4.5V), 37mΩ (3.7V), and 45 mΩ (2.5V) and built-in ESD protection of 2000V. According to Vishay, its on-resistance at 2.5 V is 11.7% lower than the closest competing 8 V VGS device — while providing higher (G-S) guard band — and 15.1% lower than the closest competing device with a 12 V VGS.
The device's industry-low on-resistance allows designers to achieve lower voltage drops in their circuits and promote more efficient use of power and longer battery run times. By integrating two MOSFETs into one compact package, the dual SiA936EDJ simplifies designs, lowers the overall component count, and saves critical PCB space. The MOSFET is 100% Rg-tested, halogen-free according to the JEDEC JS709A definition, and compliant to RoHS Directive 2011/65/EU.
Samples and production quantities of the SiA936EDJ are available now, with lead times of 12 to 14 weeks for larger orders. Pricing for U.S. delivery only starts at $0.12 per piece in 100,000-piece quantities.
