International Rectifier Corp. (IR) today announced the expansion of the StrongIRFET™ family to include 20-30V devices for applications such as high performance computing and communications. The family is headlined by the IRL6283M 20V DirectFET® featuring ultra-low on-state resistance (Rds(on)). The IRL6283M features Rds(on) of only 500 µΩ (typical) in a low profile 30 mm² DirectFET® Medium Can package to significantly reduce conduction losses. This makes it suited for active ORing and electronic fuse (eFuse) applications. The new device can be used from 3.3V, 5V or 12V rails and offers 15% lower losses at 20A than the best alternative PQFN devices in the same 30mm² form factor, enabling designers to reduce part count in high current applications.
"The expanded StrongIRFET family meets a market need for efficient switches for active ORing and electronic fuse (eFuse)," said Stephane Ernoux, Director of Marketing, IR's Power Management Devices Business Unit, "The new IRL6283M offers industry leading Rds(on) in a high performance package for unparalleled power density."
As with the entire DirectFET® family, the IRL6283M allows top-side cooling for enhanced electrical and thermal performance and wire bond-free construction for improved reliability. Moreover, the DirectFET® package meets all RoHS requirements such as a completely lead-free bill of materials being well suited for long lifecycle designs. Alternative high performance packages feature high-lead die attach under RoHS exemption 7(a) which is due to expire in 2016.
IR's StrongIRFET family also includes PQFN devices with industry standard footprints in packages that feature an environmentally friendly, lead-free and RoHS compliant bill of materials. Pricing for the IRL6283M DirectFET® power MOSFET begins at US $0.81 each in 10,000 unit quantities. Production orders are available immediately.