IXYS Corporation announced the 1700V and 2500V XPT™ IGBTs for power management applications. With current ratings ranging from 26A to 178A, the devices are well suited for high-voltage (HV), high-speed (78ns to 246ns switching) power conversion applications. Devices that are co-packed with anti-parallel fast diodes are also available.
Designed using the proprietary IXYS Extreme-Light Punch-Through (XPTâ„¢) technology and the state-of-the-art IGBT processes these new devices display qualities such as reduced thermal resistance, low tail current, low energy loss, and high-speed switching capability.
Also, thanks to the positive temperature coefficient of their on-state voltage, the new high-voltage IGBTs can be used in parallel, which provides cost-effective solutions compared to series-connected, lower-voltage device ones. This consequently results in reduction in the associated gate drive circuitry, simplicity in design, and improvement in the reliability of the overall system.
The optional co-packed fast recovery diodes have low reverse recovery time and are optimized to produce smooth switching waveforms and significantly lower electromagnetic interference (EMI).
There are a number of HV, high-speed power management applications that can benefit from utilizing these IGBTs. Among them are HV converters, inverters, power pulse circuits, laser and X-ray generators, HV power supplies, HV test equipment, capacitor discharge circuits, medical switching applications, HV circuit protection, and HV ac switches.
The new XPTâ„¢ IGBTs are available in the following international standard size packages: SOT-227, TO-247, PLUS247, ISOPLUS i5-Pakâ„¢, TO-247HV, TO-247PLUS-HV, and TO-268HV. The latter three have increased creepage distances between leads, making them robust against higher voltages. Some example part numbers include IXYH24N170C, IXYN30N170CV1, IXYH30N170C, and IXYH25N250CHV, with collector current ratings of 58A, 88A, 108A, and 95A, respectively.
