1200V SiC MOSFETs and SiC SBDs for Industrial and Automotive Designs

Microsemi Corporation today announced sampling availability of the first product in its next-generation 1200-V SiC MOSFETs, the 40-mOhm MSC040SMA120B. The company also announced the release of its complementary 1200V SiC Schottky barrier diodes (SBDs), further expanding Microsemi’s growing SiC discretes and modules portfolios.

The new SiC MOSFET product family is highly avalanche-rated, demonstrating the devices’ ruggedness for industrial, automotive and commercial aviation power applications, and offers a high short circuit withstand rating for robust operation.

Additional members of the product family will be released in the coming months, including commercially and AEC-Q101 qualified 700V and 1200V SiC MOSFET solutions to address a wide range of power applications which can leverage Microsemi’s newly released SiC SBDs.

“Our new SiC MOSFET product family provides customers with the benefits of more efficient switching and high reliability, particularly in comparison to Silicon diodes, Silicon MOSFETs and Insulated Gate Bipolar Transistor (IGBT) solutions,” said Leon Gross, vice president and business unit manager for Microsemi’s Power Discretes and Modules business unit.

“Customers focused on developing cost-effective power electronics solutions for rugged environments can select their ideal solutions from these next-generation offerings, with the ability to scale to their specific SiC MOSFET needs,” stated Gross.

Microsemi’s next-generation SiC MOSFETs and new SiC SBDs are designed with high repetitive unclamped inductive switching (UIS) capability at rated current, with no degradation or failures.

The new SiC MOSFETs maintain high UIS capability at approximately 10-15 Joule per square centimeter (J/cm2) and robust short circuit protection at 3-5 microseconds .

The company’s SiC SBDs are designed with balanced surge current, forward voltage, thermal resistance and thermal capacitance ratings at low reverse current for lower switching loss. In addition, its SiC MOSFET and SiC SBD die can be paired together for use in modules.

Microsemi’s new SiC MOSFETs and SBDs are suited for a wide range of applications within the industrial and automotive markets, and its SiC MOSFETs can also be used in switch mode power supply and motor control applications within the medical, aerospace, defense and data center markets.

Examples include hybrid electric vehicle (HEV)/EV charging, conductive/inductive onboard charging (OBC), dc-dc converters, EV powertrain/tractional control, switch mode power supply, photovoltaic (PV) inverters, motor control and actuation for aviation.

Demonstrations at APEC March 4-8 and Product Availability

Microsemi’s next-generation 1200V, 40-mOhm SiC MOSFET, MSC040SMA120B, is sampling now, and its complementary SiC SBDs are available in full production. The devices and corresponding SiC gate driver solutions will be showcased at APEC 2018 in San Antonio, Texas March 4-8, 2018 in the Richardson RFPD booth, #1147.

Microsemi Corporation
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