New Industry Products

1200V SiC MOSFET in SOT227 MiniBLOC

July 19, 2016 by Jeff Shepard

IXYS Corporation announced the availability of the IXFN50N120SK and the IXFN70N120SK both 1200V SiC MOSFETs in SOT-227 packages. Typical applications, among others, are high efficiency dc-dc converters, solar inverters, UPS systems and rapid-charger solutions.

The IXFN50N120SK and IXFN70N120SK offer a 40 miliohm (typical) and a 25 miliohm (typical), respectively, SiC MOSFET with 1200V blocking voltage in MiniBLOC (SOT-227) package featuring 3kV isolation to heat sink and a low thermal impedance. This “cool” solution is based on heat spreading technology before isolation and the usage of AlN substrate as isolator to further enhance thermal performance and allow optimized cooling of SiC dies operated with highest power densities.

Both new products provide a real Kelvin gate connection for optimized gate control. Additional features are: very low gate charge for easy drive, a fast body diode, low input and output capacities and a positive temperature coefficient supporting paralleling options for higher power applications.

“With this addition to our SiC MOSFET portfolio, IXYS enables higher power applications for the SiC based products in switching and control for inverters, UPSs and for rapid charger solutions,” commented Dr. Elmar Wisotzki, Director of Technology for IXYS Germany. “One key aspect of the devices is using our matching assembly technology to harvest the full advantage of the IXYS’ SiC power MOSFET. IXYS also offers the best driver ICs for such high power MOSFETs; thus we offer the total solution to our customers, to improve efficiency at best performance over cost ratio.”