100V N-Channel Power MOSFETs with RDS(on) Down to 3.7mΩ

Toshiba Electronic Devices & Storage Corporation has today started to ship the TPH3R70APL and TPN1200APL, new 100V additions to its low-voltage U-MOS IX-H N-channel power MOSFET series. The new devices are suitable for power supply applications in industrial equipment.

Fabricated with the company's latest low-voltage U-MOS IX-H trench process, which optimizes the element structure, the TPH3R70APL and TPN1200APL claim the industry's lowest-in-class On-resistance.

In addition, compared with the current devices using the U-MOS VIII-H process, the new devices have lower "RDS(ON) × Qoss", On-resistance times output charge, and "RDS(ON) × QSW", On-resistance times gate switch charge, key figures of merit for MOSFETs for switching applications.

Applications are expected to include Power supplies for industrial equipment and motor control systems and drives.


  • Industry's lowest-in-class On-resistance
    • RDS(ON) = 3.7mΩ (max) @ VGS = 10V (TPH3R70APL)
    • RDS(ON) = 11.5mΩ (max) @ VGS = 10V (TPN1200APL)
  • Low output charge and low gate switch charge
  • Allows 4.5V logic level drive

Main Specifications:

(click on table to enlarge)

Toshiba Electronic Devices & Storage Corporation
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