Toshiba Electronic Devices & Storage Corporation has today started to ship the TPH3R70APL and TPN1200APL, new 100V additions to its low-voltage U-MOS IX-H N-channel power MOSFET series. The new devices are suitable for power supply applications in industrial equipment.
Fabricated with the company's latest low-voltage U-MOS IX-H trench process, which optimizes the element structure, the TPH3R70APL and TPN1200APL claim the industry's lowest-in-class On-resistance.
In addition, compared with the current devices using the U-MOS VIII-H process, the new devices have lower "RDS(ON) × Qoss", On-resistance times output charge, and "RDS(ON) × QSW", On-resistance times gate switch charge, key figures of merit for MOSFETs for switching applications.
Applications are expected to include Power supplies for industrial equipment and motor control systems and drives.
- Industry's lowest-in-class On-resistance
- RDS(ON) = 3.7mΩ (max) @ VGS = 10V (TPH3R70APL)
- RDS(ON) = 11.5mΩ (max) @ VGS = 10V (TPN1200APL)
- Low output charge and low gate switch charge
- Allows 4.5V logic level drive