Components

100V N-Channel Power MOSFETs with RDS(on) Down to 3.7mΩ

Toshiba Electronic Devices & Storage Corporation has today started to ship the TPH3R70APL and TPN1200APL, new 100V additions to its low-voltage U-MOS IX-H N-channel power MOSFET series. The new devices are suitable for power supply applications in industrial equipment.

Fabricated with the company's latest low-voltage U-MOS IX-H trench process, which optimizes the element structure, the TPH3R70APL and TPN1200APL claim the industry's lowest-in-class On-resistance.

In addition, compared with the current devices using the U-MOS VIII-H process, the new devices have lower "RDS(ON) × Qoss", On-resistance times output charge, and "RDS(ON) × QSW", On-resistance times gate switch charge, key figures of merit for MOSFETs for switching applications.

Applications are expected to include Power supplies for industrial equipment and motor control systems and drives.

Features:

  • Industry's lowest-in-class On-resistance
    • RDS(ON) = 3.7mΩ (max) @ VGS = 10V (TPH3R70APL)
    • RDS(ON) = 11.5mΩ (max) @ VGS = 10V (TPN1200APL)
  • Low output charge and low gate switch charge
  • Allows 4.5V logic level drive

Main Specifications:

(click on table to enlarge)

Toshiba Electronic Devices & Storage Corporation
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