Toshiba Electronics Europe has started to ship two new 100V additions to its low-voltage U-MOS IX-H N-channel power MOSFET series. The new devices are ideally suited to power supply applications in industrial equipment as well as motor control applications.
Fabricated with Toshiba’s latest low-voltage U-MOS IX-H trench process, which optimizes the element structure, the TPH3R70APL and TPN1200APL deliver the industry’s lowest-in-class on-resistance of 3.7mΩ and 11.5mΩ respectively. The devices exhibit low output charge (QOSS: 74 / 24nC) and low gate switch charge (QSW: 21 / 7.5nC) and allows for a 4.5V logic level drive.
Compared with current devices that the U-MOS VIII-H process, the new devices have lower key figures of merit for MOSFETs for switching applications including RDS(ON) • Qoss, and RDS(ON) • QSW.
The TPH3R70APL is housed in a 5mm x 6mm SOP advance package and can handle drain currents (ID) up to 90A while the TPN1200APL is in a 3mm x 3mm TSON advance package and handles ID levels up to 40A.