100V FastIRFET PQFN 5x6 Power MOSFET targets Telecom D2Ds

International Rectifier Corp. (IR) announced the introduction of the IRFH7185TRPbF 100V FastIRFET™ power MOSFET that delivers benchmark performance for dc-dc converters used in telecom applications. The IRFH7185TRPbF utilizes IR's new 100V FastIRFET™ process to offer benchmark Rds(on)*Qg figure of merit to deliver higher efficiency and increased power density as well as enhanced system reliability. The IRFH7185TRPbF is rated for 123A at 25 degrees C. It has a typical RDS(on) at 10V Vgx of 4.2 milliOhms, a Qg at 4.5V of 36 nC and Rds(on)*Qg of 151.2 with 10Vgs.

“The IRFH7185TRPbF offers ultra-low Rds(on) with significantly lower gate charge than alternative devices to enable high performance from light load to full load. The new 100V FastIRFET™ device structure offers a twenty percent (20%) improvement in avalanche current density to deliver the industry’s most robust solution for dc-dc telecom power supplies,” said David Schroeder, Executive Director, IR’s Power Management Devices Business Unit.

IR’s FastIRFET™ devices work with any controller or driver to offer design flexibility while delivering higher current, efficiency and frequency capability in a small footprint. The IRFH7185TRPbF is qualified to industrial grade and moisture sensitivity level 1 (MSL1), and is available in an industry standard 5x6 PQFN package that features an environmentally friendly, lead-free and RoHS compliant bill of materials. Pricing for the IRFH7185TRPBF FastIRFET™ starts at US $1.15 in 1,000-unit quantities. Production orders are available immediately.