0.58mΩ / 25V N-Channel Power MOSFET with 61nC Gate Charge

Vishay Intertechnology, Inc. today introduced a new 25V n-channel TrenchFET® Gen IV power MOSFET that claims the industry’s lowest maximum on-resistance for such a device: 0.58mΩ at 10V. Delivering increased efficiency and power density for a wide range of applications, the Vishay Siliconix SiRA20DP offers the lowest gate charge and gate charge times on-resistance figure of merit (FOM) for devices with on-resistance below 0.6mΩ.

Offered in the 6mm by 5mm PowerPAK® SO-8 package, the device released today is one of the only two 25V MOSFETs in the world with maximum on-resistance below 0.6mΩ.

In comparison, the SiRA20DP offers lower typical gate charge of 61nC and a 32% lower FOM of 0.035 Ω *nC. According to Vishay, all other 25V n-channel MOSFETs feature on-resistance that is 11% higher or more.

The SiRA20DP’s low on-resistance minimizes conduction power losses to improve system efficiency and enable higher power density, which is suited for OR-ring functions in redundant power architectures.

The device’s low FOM enhances switching performance for dc-dc conversion in telecom and server power supplies, battery switching in battery systems, and load switching for 5V to 12V input rails.

The MOSFET is 100 % RG- and UIS-tested, RoHS-compliant, and halogen-free.

Samples and production quantities of the SiRA20DP are available now, with lead times of 15 weeks for large orders. Pricing for U.S. delivery starts at $1.85 per piece.

Vishay Intertechnology, Inc.
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